TOKYO--(BUSINESS WIRE)--Shin-Etsu Chemical Co., Ltd. (TOKYO: 4063) (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) has developed equipment to manufacture ...

International Sematech engineers have qualified a porous, ultra low-k material for dual damascene copper processing at 0.13-micron feature sizes using 193nm lithography on 300mm wafers, the consortium ...

As we approach the 1.5nm node and beyond, new BEOL device integration challenges will be presented. These challenges include the need for smaller metal pitches, along with support for new process ...

Virtual fabrication is used to evaluate the performance of interconnects (line and via resistance, capacitance, etc.) across pitches compatible with either EUV single exposure or SADP for three ...

A highly reliable nano-clustering silica (NCS) with low dielectric constant (k<2.3) and high elastic modulus (E=10Gpa) for copper damascene process has been developed by controlling the size and ...

Sematech qualifies porous low-k for dual damasceneJeff Chappell at ElectronicNews OnlineInternational Sematech engineers have qualified a porous, ultra low-k material for dual damascene copper ...