The BSM300D12P2E001 is a full SiC power module intended for inverters and converters in solar power conditioners and industrial equipment. The device has a current rating of 300 A making it suitable ...
Delta's Three-Phase PV Inverter benefits from the efficiency offered by SiC technology The NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC MOSFET and 1200 V, 40 A SiC boost ...
They are ideally suited for use in high power switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters, oil exploration and other high power, high voltage industrial ...
SemiQ expands its 1200-V Gen3 SiC MOSFET family with SOT-227 modules offering on-resistance values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. GCMS models are co-packaged with a Schottky barrier diode (SBD), while ...
Mitsubishi Electric Corporation has launched three different hybrid Silicon Carbide (SiC) power modules for use in home appliances, industrial equipment and railway traction applications. Model ...
PHOENIX--(BUSINESS WIRE)--ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has introduced a full SiC power module for solar inverter applications, which has been selected by the ...
MUNICH--(BUSINESS WIRE)--Vincotech, a supplier of module-based solutions for power electronics is the go-to source for SiC-based power modules that boost efficiency and enable more compact designs. No ...
Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...
The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. October 16th, 2019 - By: Wolfspeed, a Cree Company With the shift ...
Cree, Inc. is introducing the industry's first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package. Cree, Inc. is introducing the industry's first ...
A stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by one-fold, SiC power modules allow for ...
SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...
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