The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...
The rapid advancement of artificial intelligence (AI) is driving unprecedented demand for high-performance memory solutions. AI-driven applications are fueling significant year-over-year growth in ...
GDDR7 is the state-of-the-art graphics memory solution with a performance roadmap of up to 48 Gigatransfers per second (GT/s) and memory throughput of 192 GB/s per GDDR7 memory device. The next ...
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Ultrathin ferroelectric capacitors for next-generation memory devices
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device ...
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