Many technologies have sought to displace DRAM as the industry’s low-cost RAM solution, yet they have failed because they cannot credibly replace DRAM. Some required exotic new materials that were ...

2008 IEEE INTERNATIONAL SOI CONFERENCE, New Paltz, N.Y. — October 9, 2008 — Innovative Silicon, Inc. (ISi), developer of the Z-RAM® zero-capacitor floating body memory technology, demonstrated here ...

``Outstanding'' Results Demonstrated on 90nm Processes Z-RAM Proven Far More Resistant to Soft Errors Than SRAM Technologies SANTA CLARA, Calif.--Jan. 23, 2006--Innovative Silicon Inc. (ISi), the ...

Smallest silicon dynamic memory devices ever reported Largest programming window, significantly improved retention time demonstrated 2008 IEEE INTERNATIONAL SOI CONFERENCE, New Paltz, N.Y. — October ...

Z-RAM Gen2, the second generation of Z-RAM high-density memory intellectual property (IP), boosts performance while reducing power consumption, claims developer Innovative Silicon (ISi). Already, ...

SANTA CLARA, USA & ICHEON, KOREA: Innovative Silicon Inc. (ISi), the developer of Z-RAM high-density memory intellectual property (IP), and Hynix Semiconductor Inc. announced that Hynix has agreed to ...

1. Dr. Tae-Su Jang, member of technical staff in the Hynix R&D Division, will deliver the paper on June 17, 2009 that highlights the operating characteristics of Z-RAM memory technology fabricated on ...

Hynix is shaking things up in the memory market with its decision to license Innovative Silicon's Z-RAM technology. The two companies jointly announced the agreement on Monday. Z-RAM is a twist on the ...

LONDON — Serguei Okhonin, co-founder and chief scientist at Innovative Silicon Inc. (Santa Clara, Calif. and Lausanne, Switzerland) spoke at the International Electron Devices Meeting discussing ...

Innovative Silicon (ISi) is a venture-funded start-up company, founded by chief scientist Serguei Okhonin and chairman and CTO Pierre Fazan, dedicated to the development and licensing of Z-RAM memory ...