The future of chips: how gate-all-around design is powering the AI era and the next node

The industry’s answer is gate-all-around (GAA). This design wraps the gate material completely around all sides, including ...

EPC2366 eGaN® FET Wins EPDT 2025 Product of the Year Award

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Electronic Specifier

Fraunhofer IPMS closes gap in the characterisation of organic semiconductors

The Fraunhofer Institute for Photonic Microsystems IPMS developed a innovative chip that's revolutionising organic materials ...