Abstract: In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and nanosheet are ...

Abstract: In the era of artificial intelligence and big data, the demand for high-speed and reliable memory technologies is growing rapidly. For semiconductor memories such as DRAM and FeRAM, ...

View the schedule for this year's observance of Rev. Dr. Martin Luther King Jr. Day, centered on Sunday and Monday, Jan. 18–19. In 2025, Bates social media shared more than a thousand of posts. Here ...