The 100 V Gen 2 TMBS rectifier modules from Vishay Intertechnology are fully insulated devices in a compact SOT-227 package ...

Devices Offer Drop-in Replacements for Competing Solutions in Medium to High Frequency ApplicationsMALVERN, Pa., Jan. 28, ...

Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.

The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, ...

MALVERN, PA — Vishay Intertechnology (NYSE: VSH) recently introduced four new 100-volt Gen 2 Trench MOS Barrier Schottky ...

Five 1200-V SiC power modules in SOT-227 packages from Vishay serve as drop-in replacements for competing solutions.

The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...

Devices Offer Drop-in Replacements to Reduce Conduction Losses and Increase Efficiency in Industrial Applications ...

Opportunities lie in smart grids, high-frequency communication, and next-gen power modules Wide Bandgap Semiconductors Market ...

CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge ...

CISSOID has expanded its standard product offerings with the release of the CMT-PLA1BL12300MA. This new 1200V/300A Half-Bridge IGBT Power Module combines advanced switching technology with a widely ...

Vishay Intertechnology, Inc. has introduced four new 100V Gen 2 Trench MOS Barrier Schottky (TMBS) rectifier modules in the compact, fully insulated SOT-227 package. Optimised for power conversion in ...