Abstract: Sentaurus Device TCAD is enabled to simulate the carrier and lattice heating, trap generation, and the impact of generated traps on parametric shift during Hot Carrier Degradation (HCD) ...
Abstract: The Reaction-Diffusion-Drift (RDD) framework, implemented in both Sentaurus TCAD and standalone 1-D versions, is used to simulate Program/Erase (P/E) cycling related Tunnel Oxide Trap ...
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