Abstract: The Reaction-Diffusion-Drift (RDD) framework, implemented in both Sentaurus TCAD and standalone 1-D versions, is used to simulate Program/Erase (P/E) cycling related Tunnel Oxide Trap ...
Abstract: In this paper, Sentaurus TCAD simulation was utilized to study the electrical characteristics of floating body and body contact SOI devices. The short channel effect, subthreshold slope, ...
This Project consists programs related to the simulations of HEMT(High Electron Mobility Transistor).These codes are written for SILVACO TCAD simulation tool. It mainly concerned about improvement of ...
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