Abstract: 3D NAND is usually designed with the charge-trapping (CT) device, arranged in a “junction-free” structure where the transistors are serially connected without a N+ diffusion junction in ...
近日，复旦大学周鹏、刘春森团队在二维电子学领域取得突破性进展，突破性成功研发出二维-硅基混合架构全功能 2D NOR 闪存芯片。该成果以 “A full-featured 2D flash chip enabled by system integration” 为题发表于《Nature》期刊，而小型台式无掩膜直写光刻系统- MicroWriter ...
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