Abstract: In recent years, there has been significant interest in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). Multiple investigations have documented the advancement of AOS TFTs, ...
Abstract: This paper presents a compact model for the current-voltage (I–V) characteristics of field-effect transistors (FETs) based on two-dimensional molybdenum disulfide (MoS2) channels. The ...
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