Abstract: SiC power bipolar junction transistors (BJTs) are believed to have the potential of operating reliably at much higher junction temperatures as compared to SiC MOSFETs. The obstacle for ...

Share on Facebook (opens in a new window) Share on X (opens in a new window) Share on Reddit (opens in a new window) Share on Hacker News (opens in a new window) Share on Flipboard (opens in a new ...

This new offering released as MJPE-series addresses the ongoing industry demand for more power-efficient and cost-effective designs in both industrial and automotive applications. Compared to ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

In the early days, PNP bipolar transistors were common, but the bulk of circuits you see today use NPN transistors. As [Aaron Danner] points out, many people think PNP transistors are “backward” but ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

Future Display Institute of Xiamen, Xiamen 361005, P. R. China Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen ...

Ideal Power has been granted a patent for a method of operating a bi-directional double-base bipolar junction transistor (B-TRAN) in a power module. The method involves conducting load current, ...

A bipolar junction transistor (BJT) is a device that can amplify signals thanks to its two p-n junctions and three terminals: base, collector and emitter. This device is operated by current. At the ...