Abstract: This paper proposed a robust ring amplifier (RAMP) with floating power technique for high-speed application. The proposed RAMP exhibits inherent PVT robustness due to the floating-powered ...

Abstract: The FI structure can break the theoretical 1-D limit of the SiC power semiconductor. In this paper, the 4H-SiC Floating Island Junction Barrier Schottky (FIJBS) diodes with Multi- layer ...

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