Abstract: For the first time, we present a one-transistor dynamic random access memory (DRAM) cell using the ferroelectric polarization-assisted charge trapping phenomenon. The gate structure is ...

Abstract: In this study, we demonstrate a hybrid ferroelectric charge-trapping gate-stack enhancement-mode GaN tri-gate high electron mobility transistor (FEG-HEMT) featuring a fluorinated HfO2 ...

Hassle-free returns might be a thing of the past. You might want to reconsider returning that pile of unwanted gifts sitting under your tree because major retailers, like Macy’s and Zara, are charging ...