Abstract: Thermo-sensitive electrical parameters (TSEPs) are widely employed in the junction temperature estimation of insulated gate bipolar transistor (IGBT) modules. In this paper, the IGBT ...

Scale-iFlex XLT plug-and-play dual-channel gate drivers from Power Integrations operate IGBT modules with blocking voltages of up to 2.3 kV. These ready-to-use drivers work with LV100 (Mitsubishi), ...

Abstract: The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in ...

The MIXA450PF1200TSF is a high power IGBT module featuring dual 450 A and 1.2 kV in phase leg topology designed for energy efficiency power conversion and motor control applications. It is available ...

Development engineers working on the design of cost-efficient power electronic converters used in electrical drives, UPSs, welding machines or inductive heating systems depend on reliable and robust ...