Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
In the past, finding the optimum IGBT module solution was difficult in terms of low cost in combination with high performance and high reliability. Some discrete IGBTs employed a type of silicon ...
Compared with GTOs and IGCTs, IGBT modules offer the advantage of easier driving due to the MOS-gate and easier cooling due to a fully isolated package. Traction, industrial drive, and pulse power ...
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