The MIXA450PF1200TSF is a high power IGBT module featuring dual 450 A and 1.2 kV in phase leg topology designed for energy efficiency power conversion and motor control applications. It is available ...

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

TOKYO, January 14, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as ...

Compared with existing NPT technology for IGBTs, SPT reduces on-state losses by 20% and switching losses by 20% - without increasing thermal resistance. When asked for their wish list for future ...

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the ...

Mitsubishi has announced its sixth-generation of IGBT modules for power converters. “The sixth-generation carrier-stored trench-gate bipolar transistor reduces collector-emitter saturation voltage by ...