Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...

While some will sleep before making good (or not) on their New Year resolutions, Will Power hasn't wasted any time making a first impression — as if the 44-year-old needs to. Power has raced in ...