Abstract: A 256 × 256 single-photon avalanche diode image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16 μm is reported. An all-nMOS 7T pixel allows gated operation down to ...

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Abstract: This work introduces a novel accelerated lifetime testing (ALT) methodology for Lateral GaN-on-Si high electron mobility transistors (HEMTs) called “Three Factor Acceleration Testing.” By ...