Abstract: Advanced packaging solutions for wide bandgap power devices, such as silicon carbide (SiC) MOSFETs, can help realize their full potential. Additively printed electronics present a promising ...
Abstract: This letter presents a 300-GHz-band power amplifier (PA) module implementing a PA integrated circuit (IC) fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor ...
一些您可能无法访问的结果已被隐去。
显示无法访问的结果
反馈