Abstract: A series of FDSOI devices were simulated using TCAD Sentaurus Process and Sentaurus Device in this paper. Different top silicon thickness (tsi), BOX oxide thickness (tbox) and the back gate ...

Abstract: This work presents a study of the sensing regions of BE SOI MOSFET for pH sensing using TCAD Sentaurus simulation. A new approach was used to model the electrolyte, based on the literature, ...

TCAD-Silvaco-Semiconductor-Analysis; Professional Portfolio: MOSFET Characterization & CMOS Logic Simulation ; 🚀 Project Overview : This repository showcases the design, modeling, and simulation of ...